Abstract
We electrically probed the transient response of nuclear spins in an -GaAs channel by performing Hanle signal and spin-valve signal measurements on an all-electrical spin-injection device having a half-metallic spin source of . Furthermore, we simulated the Hanle and spin-valve signals by using the time evolution of nuclear-spin polarization under the presence of polarized electron spins by taking both and into consideration, where is the polarization rate of nuclear spins through the transfer of angular momentum from polarized electron spins and is the depolarization rate of nuclear spins through the interaction with the lattice. The simulation results reproduced our experimental results on all the nuclear-spin-related phenomena appearing in the Hanle and spin-valve signals at different measurement conditions, providing quantitative explanation for the transient response of nuclear spins in GaAs to a change in magnetic fields and an estimate of the time scales of and . These experimental and simulated results will deepen the understanding of nuclear-spin dynamics in semiconductors.
- Received 5 August 2017
- Revised 25 October 2017
DOI:https://doi.org/10.1103/PhysRevB.96.184415
©2017 American Physical Society