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Symmetric-gapped surface states of fractional topological insulators

Gil Young Cho, Jeffrey C. Y. Teo, and Eduardo Fradkin
Phys. Rev. B 96, 161109(R) – Published 12 October 2017
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Abstract

We construct the symmetric-gapped surface states of a fractional topological insulator with an electromagnetic θ angle θem=π3 and a discrete Z3 gauge field. They are the proper generalizations of the T-Pfaffian state and Pfaffian/antisemion state and feature an extended periodicity compared with their “integer” topological band insulator counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.

  • Received 22 June 2017

DOI:https://doi.org/10.1103/PhysRevB.96.161109

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Gil Young Cho1,2, Jeffrey C. Y. Teo3, and Eduardo Fradkin4

  • 1School of Physics, Korea Institute for Advanced Study, Seoul 02455, Korea
  • 2Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
  • 3Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
  • 4Department of Physics and Institute for Condensed Matter Theory, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, USA

See Also

Surfaces and slabs of fractional topological insulator heterostructures

Sharmistha Sahoo, Alexander Sirota, Gil Young Cho, and Jeffrey C. Y. Teo
Phys. Rev. B 96, 161108(R) (2017)

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Issue

Vol. 96, Iss. 16 — 15 October 2017

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