Anomalous Hall effect scaling in ferromagnetic thin films

Vahram L. Grigoryan, Jiang Xiao (萧江), Xuhui Wang, and Ke Xia
Phys. Rev. B 96, 144426 – Published 23 October 2017

Abstract

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

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  • Received 5 July 2016
  • Revised 31 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.144426

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Vahram L. Grigoryan1,2, Jiang Xiao (萧江)3,4,5,*, Xuhui Wang6,†, and Ke Xia1,2,7,‡

  • 1The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
  • 2Beijing Normal University, Zhuhai 519087, Guangdong, China
  • 3Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
  • 4Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 5Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 6King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division, Thuwal 23955-6900, Saudi Arabia
  • 7Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, China

  • *Corresponding author: xiaojiang@fudan.edu.cn
  • Present address: Kwantum Links, Benoordenhoutseweg 23, 2596 BA, The Hague, The Netherlands.
  • Corresponding author: kexia@bnu.edu.cn

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Issue

Vol. 96, Iss. 14 — 1 October 2017

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