Experimental evidence for type-II Dirac semimetal in PtSe2

Kenan Zhang, Mingzhe Yan, Haoxiong Zhang, Huaqing Huang, Masashi Arita, Zhe Sun, Wenhui Duan, Yang Wu, and Shuyun Zhou
Phys. Rev. B 96, 125102 – Published 1 September 2017

Abstract

While a monolayer PtSe2 film is a semiconductor with interesting spin structure, bulk PtSe2 crystal has been predicted to be a topological Dirac semimetal that can host a new type of Lorentz-violating Dirac fermions. Despite the intriguing predictions, experimental progress on the electronic structure of bulk PtSe2 has been hindered due to the lack of large, high-quality single-crystal samples. Here we report the growth and characterization of high-quality PtSe2 single crystals and reveal the electronic structure to provide direct evidence for the existence of three-dimensional type-II Dirac fermions. A comparison of the crystal, vibrational, and electronic structure to a related compound, PtTe2, is also discussed. Our work provides an important platform for exploring the novel quantum phenomena associated with type-II Dirac fermions in the 1TPtSe2 class of transition-metal dichalcogenides.

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  • Received 27 March 2017

DOI:https://doi.org/10.1103/PhysRevB.96.125102

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kenan Zhang1, Mingzhe Yan1, Haoxiong Zhang1, Huaqing Huang1, Masashi Arita2, Zhe Sun3, Wenhui Duan1,4, Yang Wu5, and Shuyun Zhou1,4,*

  • 1State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
  • 2Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashihiroshima, Hiroshima 739-0046, Japan
  • 3National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China
  • 4Collaborative Innovation Center of Quantum Matter, Beijing, China
  • 5Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China

  • *Corresponding author: syzhou@mail.tsinghua.edu.cn

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Issue

Vol. 96, Iss. 12 — 15 September 2017

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