Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films

Elsa Abreu, Stephanie N. Gilbert Corder, Sun Jin Yun, Siming Wang, Juan Gabriel Ramírez, Kevin West, Jingdi Zhang, Salinporn Kittiwatanakul, Ivan K. Schuller, Jiwei Lu, Stuart A. Wolf, Hyun-Tak Kim, Mengkun Liu, and Richard D. Averitt
Phys. Rev. B 96, 094309 – Published 21 September 2017
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Abstract

Ultrafast optical pump–optical probe and optical pump–terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the spectral weight oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in both materials. The low-energy Drude response of V2O3 appears more amenable than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the insulator-to-metal phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, paving the way to similar studies in other complex materials.

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  • Received 19 January 2017
  • Revised 28 July 2017

DOI:https://doi.org/10.1103/PhysRevB.96.094309

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Elsa Abreu1,*, Stephanie N. Gilbert Corder2, Sun Jin Yun3,4, Siming Wang5,6,7,8, Juan Gabriel Ramírez9, Kevin West10,5,6, Jingdi Zhang5,†, Salinporn Kittiwatanakul10, Ivan K. Schuller5,6,7, Jiwei Lu10, Stuart A. Wolf10,11, Hyun-Tak Kim3,4, Mengkun Liu2,‡, and Richard D. Averitt5,§

  • 1Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zurich, Switzerland
  • 2Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794, USA
  • 3Metal-Insulator Transition Lab, ETRI, Daejeon 305-350, South Korea
  • 4School of Advanced Device Technology, University of Science and Technology, Daejeon 305-333, South Korea
  • 5Department of Physics, The University of California at San Diego, La Jolla, California 92093, USA
  • 6Center for Advanced Nanoscience, The University of California at San Diego, La Jolla, California 92093, USA
  • 7Materials Science and Engineering Program, The University of California at San Diego, La Jolla, California 92093, USA
  • 8Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 9Department of Physics, Universidad de los Andes, Bogotá 111711, Colombia
  • 10Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
  • 11Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA

  • *Previously at Department of Physics, Boston University, Boston, MA 02215, USA; elsabreu@phys.ethz.ch
  • Previously at Department of Physics, Boston University, Boston, MA 02215, USA.
  • Previously at Department of Physics, Boston University, Boston, MA 02215, USA; mengkun.liu@stonybrook.edu
  • §Previously at Department of Physics, Boston University, Boston, MA 02215, USA; raveritt@physics.ucsd.edu

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Issue

Vol. 96, Iss. 9 — 1 September 2017

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