Analysis of the Sn chain length fluctuations on Si(100)2×1: An extraction of microscopic parameters

M. Kučera, P. Kocán, P. Sobotík, K. Majer, and I. Ošt'ádal
Phys. Rev. B 96, 045430 – Published 24 July 2017

Abstract

Tin chains grown on the Si(100)2×1 surface were studied by scanning tunneling microscopy. Real time measurements were used for recording chain length fluctuations in a temperature range from 310 to 350 K. The recorded data were analyzed by means of a statistical model containing both interfering processes observed at a chain termination—random attachment and detachment of metal atoms. Rates of the both processes were calculated from lifetimes of two different chain terminations (monomer or dimer) by means of derived formulas. The activation energies for the detachment and frequency prefactors were calculated from dependence of the corresponding time constants on temperature in an Arrhenius plot. A similar approach was used for characterization of binding Sn atoms on C-type defects which represent preferential adsorption sites.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 6 March 2017
  • Revised 21 June 2017

DOI:https://doi.org/10.1103/PhysRevB.96.045430

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Kučera*, P. Kocán, P. Sobotík, K. Majer, and I. Ošt'ádal

  • Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic

  • *Corresponding author: mikucer@gmail.com

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 96, Iss. 4 — 15 July 2017

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×