Explicit inclusion of electronic correlation effects in molecular dynamics

Jean-Pierre Julien, Joel D. Kress, and Jian-Xin Zhu
Phys. Rev. B 96, 035111 – Published 7 July 2017

Abstract

We design a quantum molecular dynamics method for strongly correlated electron metals. The strong electronic correlation effects are treated within a real-space version of the Gutzwiller variational approximation (GA), which is suitable for the inhomogeneity inherent in the process of quantum molecular dynamics (MD) simulations. We also propose an efficient algorithm based on the second-moment approximation to the electronic density of states for the search of the optimal variation parameters, from which the renormalized interatomic MD potentials are fully determined. By considering a minimal one-correlated-orbital Anderson model with parameterized spatial dependence of tight-binding hopping integrals, this fast GA-MD method is benchmarked with that using exact diagonalization to solve the GA variational parameters. The efficiency and accuracy are illustrated. We have demonstrated the effect of temperature coupled with electronic correlation on structural properties simulated with MD. This method will open up an unprecedented opportunity enabling large-scale quantum MD simulations of strongly correlated electronic materials.

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  • Received 14 September 2016
  • Revised 2 May 2017

DOI:https://doi.org/10.1103/PhysRevB.96.035111

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jean-Pierre Julien1,2, Joel D. Kress2, and Jian-Xin Zhu2,3

  • 1CNRS/Université de Grenoble Alpes-Institut Néel, France
  • 2Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 3Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

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Issue

Vol. 96, Iss. 3 — 15 July 2017

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