Enhanced ferromagnetic transition temperature induced by a microscopic structural rearrangement in the diluted magnetic semiconductor Ge1xMnxTe

M. Kriener, T. Nakajima, Y. Kaneko, A. Kikkawa, D. Hashizume, K. Kato, M. Takata, T. Arima, Y. Tokura, and Y. Taguchi
Phys. Rev. B 95, 224418 – Published 15 June 2017
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Abstract

The correlation between magnetic properties and microscopic structural aspects in the diluted magnetic semiconductor Ge1xMnxTe is investigated by x-ray diffraction and magnetization as a function of the Mn concentration x. The occurrence of high ferromagnetic-transition temperatures in the rhombohedrally distorted phase of slowly cooled Ge1xMnxTe is shown to be directly correlated with the formation and coexistence of strongly distorted Mn-poor and weakly distorted Mn-rich regions. It is demonstrated that the weakly distorted phase fraction is responsible for the occurrence of high-transition temperatures in Ge1xMnxTe. When the Mn concentration becomes larger, the Mn-rich regions start to switch into the undistorted cubic structure, and the transition temperature is suppressed concurrently. By identifying suitable annealing conditions, we successfully increased the transition temperature to above 200 K for Mn concentrations close to the cubic phase. Structural data indicate that the weakly distorted phase fraction can be restored at the expense of the cubic regions upon the enhancement of the transition temperature, clearly establishing the direct link between high-transition temperatures and the weakly distorted Mn-rich phase fraction.

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  • Received 7 November 2016
  • Revised 24 April 2017

DOI:https://doi.org/10.1103/PhysRevB.95.224418

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Kriener1,*, T. Nakajima1, Y. Kaneko1, A. Kikkawa1, D. Hashizume1, K. Kato2, M. Takata2, T. Arima1,3, Y. Tokura1,4, and Y. Taguchi1

  • 1RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
  • 2RIKEN SPring-8 Center, Hyogo 679-5148, Japan
  • 3Department of Advanced Materials Science, University of Tokyo, Kashiwa 277-8561, Japan
  • 4Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan

  • *markus.kriener@riken.jp

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Issue

Vol. 95, Iss. 22 — 1 June 2017

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