Electronic correlation effects and Coulomb gap in the Si(111)-(3×3)-Sn surface

A. B. Odobescu, A. A. Maizlakh, N. I. Fedotov, and S. V. Zaitsev-Zotov
Phys. Rev. B 95, 195151 – Published 23 May 2017

Abstract

The electronic transport properties of the Si(111)-(3×3)-Sn surface formed on the low-doped Si substrates are studied using two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the ground state corresponds to a Mott-Hubbard insulator with a band gap of 2Δ70meV, which vanishes quickly upon the temperature increase at T3040K. The energy gap at the Fermi level observed in tunneling spectroscopy measurements at higher temperatures could be described in terms of the dynamic Coulomb blockade approximation. The temperature dependence of the surface conductivity above 45 K corresponds to the Efros-Shklovskii hopping conduction law. The obtained localization length of the electron is ξ7Å.

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  • Received 15 December 2016
  • Revised 31 March 2017

DOI:https://doi.org/10.1103/PhysRevB.95.195151

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. B. Odobescu*, A. A. Maizlakh, N. I. Fedotov, and S. V. Zaitsev-Zotov

  • Kotel'nikov IRE RAS, Mokhovaya 11, Building 7, 125009 Moscow, Russia

  • *arty@cplire.ru

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Vol. 95, Iss. 19 — 15 May 2017

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