Two-dimensional van der Waals p-n junction of InSe/phosphorene

J. E. Padilha, R. H. Miwa, Antonio J. R. da Silva, and A. Fazzio
Phys. Rev. B 95, 195143 – Published 19 May 2017

Abstract

We investigate the energetic stability and the structural and electronic properties of semiconductor/semiconductor and semiconductor/metal 2D van der Waals heterostructures composed by combinations of single layer InSe, bilayer phosphorene (BP), and graphene. For the semiconductor/semiconductor BP/InSe heterostructure, we found that the lowest (highest) unoccupied (occupied) states lie on the InSe (BP) layers, giving rise to a type-II band alignment, with electrons (holes) localized in the InSe (BP) layers. The semiconductor/metal interface composed by a single layer of InSe stacked on graphene (InSe/G) presents a n-type Schottky barrier, which can be tuned by applying an external electric field perpendicular to the InSe/G interface (Eext). Upon further increase of Eext, the InSe/G contact becomes Ohmic, promoting a net charge transfer from the graphene sheet to the InSe layer, n-type doping. This is in contrast with the other semiconductor/metal van der Waals heterojunction, BP/G, where the BP sheet becomes p-type doped as a function of Eext. Exploiting the electron-hole separation in BP/InSe, and the formation of Ohmic contacts at the InSe/G and BP/G interfaces, we propose a pn junction composed by p-type BP and n-type InSe, with the graphene acting as electrodes and also as a source of electrons/holes in InSe/BP.

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  • Received 10 February 2017
  • Revised 4 April 2017

DOI:https://doi.org/10.1103/PhysRevB.95.195143

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. E. Padilha1,*, R. H. Miwa2,†, Antonio J. R. da Silva3,‡, and A. Fazzio4,§

  • 1Campus Avançado Jandaia do Sul, Universidade Federal do Paraná, Jandaia do Sul, PR, Brazil
  • 2Instituto de Física, Universidade Federal de Uberlândia, Caixa Postal 593, 38400-902, Uberlândia, MG, Brazil
  • 3Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970, São Paulo, SP, Brazil and Laboratório Nacional de Luz Síncrotron, CP 6192, 13083-970, Campinas, SP, Brazil
  • 4Brazilian Nanotechnology National Laboratory(LNNano)/CNPEM, 130830-979, Campinas, SP, Brazil

  • *jose.padilha@ufpr.br
  • hiroki@ufu.br
  • jose.roque@lnls.br
  • §fazzio@if.usp.br; also at Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, Santo André, São Paulo, 09210-170, Brazil.

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Vol. 95, Iss. 19 — 15 May 2017

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