Robust spin transfer torque in antiferromagnetic tunnel junctions

Hamed Ben Mohamed Saidaoui, Xavier Waintal, and Aurélien Manchon
Phys. Rev. B 95, 134424 – Published 17 April 2017

Abstract

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, n×p, while the torque competing with the antiferromagnetic exchange is in plane, n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

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  • Received 6 July 2016
  • Revised 8 March 2017

DOI:https://doi.org/10.1103/PhysRevB.95.134424

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hamed Ben Mohamed Saidaoui

  • King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia

Xavier Waintal

  • University Grenoble Alpes, INAC-PHELIQS, F-38000 Grenoble, France CEA, INAC-PHELIQS, F-38000 Grenoble, France

Aurélien Manchon*

  • King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia

  • *aurelien.manchon@kaust.edu.sa

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Issue

Vol. 95, Iss. 13 — 1 April 2017

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