Electronic band structure for occupied and unoccupied states of the natural topological superlattice phase Sb2Te

L. Khalil, E. Papalazarou, M. Caputo, N. Nilforoushan, L. Perfetti, A. Taleb-Ibrahimi, V. Kandyba, A. Barinov, Q. D. Gibson, R. J. Cava, and M. Marsi
Phys. Rev. B 95, 085118 – Published 15 February 2017

Abstract

We present an experimental study describing the effects of surface termination on the electronic structure of the natural topological superlattice phase Sb2Te. Using scanning angle-resolved photoemission microscopy, we consistently find various nonequivalent regions on the same surface after cleaving various Sb2Te single crystals. We were able to identify three distinct terminations characterized by different Sb/Te surface stoichiometric ratios and with clear differences in their band structure. For the dominating Te-rich termination, we also provide a direct observation of the excited electronic states and of their relaxation dynamics by means of time-resolved angle-resolved photoemission spectroscopy. Our results clearly indicate that the surface electronic structure is strongly affected by the bulk properties of the superlattice.

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  • Received 18 November 2016

DOI:https://doi.org/10.1103/PhysRevB.95.085118

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

L. Khalil1,2, E. Papalazarou1, M. Caputo1, N. Nilforoushan1, L. Perfetti3, A. Taleb-Ibrahimi2, V. Kandyba4, A. Barinov4, Q. D. Gibson5, R. J. Cava5, and M. Marsi1

  • 1Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France
  • 2UR1-CNRS/Synchrotron SOLEIL, Saint Aubin BP 48, Gif-sur-Yvette F-91192, France
  • 3Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS, CEA, Université Paris-Saclay, 91128 Palaiseau Cedex, France
  • 4Elettra – Sincrotrone Trieste SCpA, AREA Science Park, 34149 Trieste, Italy
  • 5Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA

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Issue

Vol. 95, Iss. 8 — 15 February 2017

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