Chern insulators without band inversion in MoS2 monolayers with 3d adatoms

Xinyuan Wei, Bao Zhao, Jiayong Zhang, Yang Xue, Yun Li, and Zhongqin Yang
Phys. Rev. B 95, 075419 – Published 16 February 2017

Abstract

Electronic and topological properties of MoS2 monolayers endowed with 3d transition metal (TM) adatoms (V-Fe) are explored by using ab initio methods and k·p models. Without the consideration of the Hubbard U interaction, the V, Cr, and Fe adatoms tend to locate on the top of the Mo atoms, while the most stable site for the Mn atom is at the hollow position of the Mo-S hexagon. After the Hubbard U is applied, the most stable sites of all the systems become the top of the Mo atoms. Chern insulators without band inversion are achieved in these systems. The V and Fe adsorption systems are the best candidates to produce the topological states. The k·p model calculations indicate that these topological states are determined by the TM magnetism, the C3v crystal field from the MoS2 substrate, and the TM atomic spin-orbit coupling (SOC). The special two-meron pseudospin texture is found to contribute to the topology. The apparent difference between the Berry curvatures for the V and Fe adsorption systems is also explored. Our results widen the understanding of the Chern insulators and are helpful for the applications of the MoS2 monolayers in the future electronics and spintronics.

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  • Received 29 August 2016
  • Revised 30 November 2016

DOI:https://doi.org/10.1103/PhysRevB.95.075419

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xinyuan Wei1, Bao Zhao1,2, Jiayong Zhang1, Yang Xue1, Yun Li3, and Zhongqin Yang1,4,*

  • 1State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) & Department of Physics, Fudan University, Shanghai 200433, China
  • 2College of Physical Science and Information Technology, Liaocheng University, Liaocheng 252000, China
  • 3Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China
  • 4Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China

  • *zyang@fudan.edu.cn

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Issue

Vol. 95, Iss. 7 — 15 February 2017

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