Quantum and tunneling capacitance in charge and spin qubits

R. Mizuta, R. M. Otxoa, A. C. Betz, and M. F. Gonzalez-Zalba
Phys. Rev. B 95, 045414 – Published 18 January 2017

Abstract

We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high frequencies. We find that, in general, the total capacitance of the system consists of two state-dependent terms: the quantum capacitance arising from adiabatic charge motion and the tunneling capacitance that appears when repopulation occurs at a rate comparable or faster than the probing frequency. The analysis of the capacitance lineshape as a function of externally controllable variables offers a way to characterize the qubits' charge and spin state as well as relevant system parameters such as charge and spin relaxation rates, tunnel coupling, electron temperature, and electron g factor. Overall, our analysis provides a formalism to understand dispersive qubit-resonator interactions which can be applied to high-sensitivity and noninvasive quantum-state readout.

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  • Received 12 April 2016
  • Revised 6 November 2016

DOI:https://doi.org/10.1103/PhysRevB.95.045414

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsQuantum Information, Science & Technology

Authors & Affiliations

R. Mizuta, R. M. Otxoa, A. C. Betz, and M. F. Gonzalez-Zalba*

  • Hitachi Cambridge Laboratory, J. J. Thomson Ave., Cambridge, CB3 0HE, United Kingdom

  • *mg507@cam.ac.uk

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Issue

Vol. 95, Iss. 4 — 15 January 2017

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