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Resistivity of the insulating phase approaching the two-dimensional metal-insulator transition: The effect of spin polarization

Shiqi Li and M. P. Sarachik
Phys. Rev. B 95, 041301(R) – Published 11 January 2017

Abstract

The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping ρ(T)=ρ0exp[(TES/T)1/2], with TES and 1/ρ0 mapping onto each other if one applies a shift of the critical density nc reported earlier. With and without magnetic field, the parameters TES and 1/ρ0=σ0 exhibit scaling consistent with critical behavior approaching a metal-insulator transition.

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  • Received 25 July 2016
  • Revised 1 December 2016

DOI:https://doi.org/10.1103/PhysRevB.95.041301

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shiqi Li* and M. P. Sarachik

  • Department of Physics, City College of New York, CUNY, New York, New York 10031, USA

  • *Corresponding author: sli@ccny.cuny.edu

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Issue

Vol. 95, Iss. 4 — 15 January 2017

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