Abstract
The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping , with and mapping onto each other if one applies a shift of the critical density reported earlier. With and without magnetic field, the parameters and exhibit scaling consistent with critical behavior approaching a metal-insulator transition.
- Received 25 July 2016
- Revised 1 December 2016
DOI:https://doi.org/10.1103/PhysRevB.95.041301
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