Suppressing the spin relaxation of electrons in silicon

Oleg Chalaev, Yang Song, and Hanan Dery
Phys. Rev. B 95, 035204 – Published 17 January 2017

Abstract

Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant scattering mechanisms are quenched and electrons mainly experience intra-axis scattering processes (intravalley or intervalley scattering within valleys on the same crystal axis). We first derive the spin-flip matrix elements due to intra-axis electron scattering off impurities, and then provide a comprehensive model of the spin relaxation time due to all possible interactions of conduction-band electrons with impurities and phonons. We predict a nearly three orders of magnitude improvement in the spin relaxation time of 1019cm3 antimony-doped silicon (Si:Sb) at low temperatures.

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  • Received 22 September 2016
  • Revised 26 December 2016

DOI:https://doi.org/10.1103/PhysRevB.95.035204

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Oleg Chalaev1, Yang Song1, and Hanan Dery1,2,*

  • 1Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA
  • 2Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

  • *hanan.dery@rochester.edu

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Issue

Vol. 95, Iss. 3 — 15 January 2017

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