Low-temperature Hall effect in bismuth chalcogenides thin films

A. Yu. Kuntsevich, A. A. Gabdullin, V. A. Prudkogliad, Yu. G. Selivanov, E. G. Chizhevskii, and V. M. Pudalov
Phys. Rev. B 94, 235401 – Published 1 December 2016

Abstract

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures, thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using a purely phenomenological approach, with no microscopic theory, we show that the low-temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with the diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.

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  • Received 7 July 2016
  • Revised 14 October 2016

DOI:https://doi.org/10.1103/PhysRevB.94.235401

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. Yu. Kuntsevich1,2,*, A. A. Gabdullin1,3, V. A. Prudkogliad1, Yu. G. Selivanov1, E. G. Chizhevskii1, and V. M. Pudalov1,2

  • 1P. N. Lebedev Physics Institute, 119991 Moscow, Russia
  • 2National Research University Higher School of Economics, Moscow 101000, Russia
  • 3National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe sh. 31, 115409 Moscow, Russia

  • *alexkun@lebedev.ru

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Issue

Vol. 94, Iss. 23 — 15 December 2016

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