Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

Koushik Ramadoss, Nirajan Mandal, Xia Dai, Zhong Wan, You Zhou, Leonid Rokhinson, Yong P. Chen, Jiangpin Hu, and Shriram Ramanathan
Phys. Rev. B 94, 235124 – Published 9 December 2016
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Abstract

We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electron-doped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Undoped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear nonsaturating positive MR0.2% at 50 K. The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.

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  • Received 31 July 2016
  • Revised 14 November 2016

DOI:https://doi.org/10.1103/PhysRevB.94.235124

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Koushik Ramadoss1,*, Nirajan Mandal2,3, Xia Dai4, Zhong Wan2, You Zhou5, Leonid Rokhinson2,3,6, Yong P. Chen2,3,6, Jiangpin Hu2, and Shriram Ramanathan1

  • 1School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA
  • 2Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA
  • 3Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
  • 4Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
  • 5School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
  • 6School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

  • *koushik@purdue.edu, shriram@purdue.edu

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Issue

Vol. 94, Iss. 23 — 15 December 2016

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