Abstract
The frustration of magnetization and conductivity properties of ultrathin manganite is detrimental to their device performance, preventing their scaling down process. Here we demonstrate that the magnetism of ultrathin films can be restored by a capping layer, which engineers the surface from a symmetry breaking induced out-of-plane orbital occupancy to the recovered in-plane orbital occupancy. The stabilized in-plane orbital occupancy would strengthen the intralayer double exchange and thus recovers the robust magnetism. This method is proved to be effective for films as thin as 2 unit cells, greatly shrinking the critical thickness of 6 unit cells for ferromagnetic as demonstrated previously [Wang et al., Science 349, 716 (2015)]. The achievement made in this work opens up new perspectives to an active control of surface states and thereby tailors the surface functional properties of transition metal oxides.
- Received 14 August 2016
- Revised 14 November 2016
DOI:https://doi.org/10.1103/PhysRevB.94.214404
©2016 American Physical Society