Purcell enhancement of fast-dephasing spontaneous emission from electron-hole droplets in high-Q silicon photonic crystal nanocavities

Hisashi Sumikura, Eiichi Kuramochi, Hideaki Taniyama, and Masaya Notomi
Phys. Rev. B 94, 195314 – Published 29 November 2016

Abstract

We have observed electron-hole droplet emission enhanced by silicon photonic crystal nanocavities with different Q values and simulated their Purcell effect using a semiclassical theory considering the temporal dephasing of the emission. When the photon loss rate of the nanocavities is smaller than the dephasing rate of the emission, the cavity-enhanced integrated photoluminescence (PL) intensity is unchanged by the cavity Q value. This is because the Purcell enhancement of the spontaneous emission rate is saturated in a high-Q region. In contrast, the peak intensity of the cavity-enhanced PL is proportional to the cavity Q value without saturation. These results suggest that a high-Q nanocavity is suitable for fabricating bright narrowband light emitting devices that concentrate the broadband emission energy of fast-dephasing emitters in a narrowband cavity resonance.

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  • Received 23 September 2016
  • Revised 7 November 2016

DOI:https://doi.org/10.1103/PhysRevB.94.195314

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hisashi Sumikura*, Eiichi Kuramochi, Hideaki Taniyama, and Masaya Notomi

  • NTT Nanophotonics Center, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan and NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

  • *sumikura.hisashi@lab.ntt.co.jp

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Issue

Vol. 94, Iss. 19 — 15 November 2016

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