Abstract
The properties of interstitial vanadium in Si and its interactions with the vacancy and the self-interstitial, as well as with hydrogen, are calculated using first-principles techniques. The stable configurations, gap levels, and binding energies agree well with the available experimental data. The nudged-elastic-band method is used to calculate the activation energies for diffusion of in various charge states. They range from 1.46 (for ) to 2.04 eV (for ). The (trigonal) pair has a binding energy of 1.15 eV, a donor level at , and possibly an acceptor level . Substitutional vanadium can also trap H interstitials and form electrically active and complexes.
- Received 1 August 2016
- Revised 12 October 2016
DOI:https://doi.org/10.1103/PhysRevB.94.195210
©2016 American Physical Society