Vanadium interactions in crystalline silicon

D. J. Backlund, T. M. Gibbons, and S. K. Estreicher
Phys. Rev. B 94, 195210 – Published 28 November 2016

Abstract

The properties of interstitial vanadium (Vi) in Si and its interactions with the vacancy and the self-interstitial, as well as with hydrogen, are calculated using first-principles techniques. The stable configurations, gap levels, and binding energies agree well with the available experimental data. The nudged-elastic-band method is used to calculate the activation energies for diffusion of Vi in various charge states. They range from 1.46 (for Vi+) to 2.04 eV (for Vi). The (trigonal) {Vi,H} pair has a binding energy of 1.15 eV, a donor level at Ec0.61eV, and possibly an acceptor level Ec0.07eV. Substitutional vanadium (Vs) can also trap H interstitials and form electrically active {Vs,H} and {Vs,H,H} complexes.

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  • Received 1 August 2016
  • Revised 12 October 2016

DOI:https://doi.org/10.1103/PhysRevB.94.195210

©2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

D. J. Backlund, T. M. Gibbons, and S. K. Estreicher*

  • Physics Department, Texas Tech University, Lubbock, Texas 79409-1051, USA

  • *stefan.estreicher@ttu.edu

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Issue

Vol. 94, Iss. 19 — 15 November 2016

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