Observation of semilocalized dispersive states in the strongly correlated electron-doped ferromagnet Eu1xGdxO

D. E. Shai, M. H. Fischer, A. J. Melville, E. J. Monkman, J. W. Harter, D. W. Shen, D. G. Schlom, M. J. Lawler, E.-A. Kim, and K. M. Shen
Phys. Rev. B 94, 195102 – Published 1 November 2016

Abstract

Chemical substitution plays a key role in controlling the electronic and magnetic properties of complex materials. For instance, in EuO, carrier doping can induce a spin-polarized metallic state and colossal magnetoresistance, and significantly enhance the Curie temperature. Here, we employ a combination of molecular-beam epitaxy, angle-resolved photoemission spectroscopy, and an effective model calculation to investigate and understand how semilocalized states evolve in lightly electron-doped Eu1xGdxO above the ferromagnetic Curie temperature. Our studies reveal a characteristic length scale for the spatial extent of the donor wave functions which remains constant as a function of doping, consistent with recent tunneling studies of doped EuO. Our work sheds light on the nature of the semiconductor-to-metal transition in Eu1xGdxO and should be generally applicable for doped complex oxides.

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  • Received 2 September 2016
  • Revised 14 October 2016

DOI:https://doi.org/10.1103/PhysRevB.94.195102

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

D. E. Shai1, M. H. Fischer1,2, A. J. Melville3, E. J. Monkman1, J. W. Harter1, D. W. Shen1,4, D. G. Schlom3,5, M. J. Lawler1,6, E.-A. Kim1, and K. M. Shen1,5,*

  • 1Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
  • 2Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
  • 3Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
  • 4State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
  • 5Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
  • 6Department of Physics, Binghamton University, Binghamton, New York 13902, USA

  • *Author to whom correspondence should be addressed: kmshen@cornell.edu

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Issue

Vol. 94, Iss. 19 — 15 November 2016

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