Recovery of SINIS turnstile accuracy in a strongly nonequilibrium regime

I. M. Khaymovich and D. M. Basko
Phys. Rev. B 94, 165158 – Published 24 October 2016

Abstract

We perform a theoretical study of nonequilibrium effects in charge transport through a hybrid single-electron transistor based on a small normal metal (N) island with the gate-controlled number of electrons, tunnel-coupled to voltage-biased superconducting (S) electrodes (SINIS). Focusing on the turnstile mode of the transistor operation with the gate voltage driven periodically, and electrons on the island being out of equilibrium, we find that the current quantization accuracy is a nonmonotonic function of the relaxation rate ΓF of the distribution function F(ε) on the island due to tunneling, as compared to the drive frequency f, electron-electron 1/τee, and electron-phonon 1/τeph relaxation rates. Surprisingly, in the strongly nonequilibrium regime, fΓFτee1,τeph1, the turnstile current plateau is recovered, similarly to the ideal equilibrium regime, τeph1ΓF. The plateau is destroyed in the quasiequilibrium regime when the electron-electron relaxation is faster than tunneling.

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  • Received 29 July 2016

DOI:https://doi.org/10.1103/PhysRevB.94.165158

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

I. M. Khaymovich1,2,3 and D. M. Basko1

  • 1Laboratoire de Physique et Modélisation des Milieux Condensés, Université de Grenoble Alpes and CNRS, 25 rue des Martyrs, 38042 Grenoble, France
  • 2Nanosciences Foundation, 23 rue des Martyrs, 38000 Grenoble, France
  • 3Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105, Russia

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Issue

Vol. 94, Iss. 16 — 15 October 2016

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