Charge and spin diffusion on the metallic side of the metal-insulator transition: A self-consistent approach

Thomas Wellens and Rodolfo A. Jalabert
Phys. Rev. B 94, 144209 – Published 26 October 2016

Abstract

We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and diffusion coefficient are calculated within different schemes of the self-consistent framework. The simplest of these schemes qualitatively reproduces previous phenomenological developments, while more elaborate calculations provide corrections that approach the values obtained in numerical simulations. The results are universal for zinc-blende semiconductors with electron conductance in the impurity band, and thus they are able to account for the measured spin-relaxation times of materials with very different physical parameters. From a general point of view, our theory opens a new perspective for describing the hopping dynamics in random quantum networks.

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  • Received 11 April 2016
  • Revised 12 May 2016

DOI:https://doi.org/10.1103/PhysRevB.94.144209

©2016 American Physical Society

Authors & Affiliations

Thomas Wellens1 and Rodolfo A. Jalabert2,3

  • 1Physikalisches Institut, Albert-Ludwigs-Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg, Germany
  • 2Freiburg Institute for Advanced Studies, Albert-Ludwigs-Universität Freiburg, Albertstr. 19, D-79104 Freiburg, Germany
  • 3Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France

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Issue

Vol. 94, Iss. 14 — 1 October 2016

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