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Pinched hysteresis loop in defect-free ferroelectric materials

Bin Xu, Charles Paillard, Brahim Dkhil, and L. Bellaiche
Phys. Rev. B 94, 140101(R) – Published 24 October 2016
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Abstract

In addition to the single polarization-versus-electric field hysteresis loop that is characteristic of ferroelectrics and the double hysteresis loop that is known to occur in antiferroelectrics, a third kind of polarization-versus-electric field function has been reported in several systems. This third kind is commonly termed the “pinched” loop due to its unusual shape, and is typically believed to originate from the pinning of domain walls interacting with defects. Here, using an atomistic effective Hamiltonian scheme, we demonstrate that such a belief has to be broadened since our simulations also yield pinched loops in defect-free ferroelectric materials, as a result of the occurrence of intermediate modulated phases exhibiting an inhomogeneous dipolar pattern leading to the coexistence of both ferroelectric and antiferroelectric orders.

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  • Received 25 May 2016

DOI:https://doi.org/10.1103/PhysRevB.94.140101

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Bin Xu1,*, Charles Paillard1,2, Brahim Dkhil2, and L. Bellaiche1

  • 1Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 2Laboratoire SPMS, CentraleSupélec/CNRS UMR8580, Université Paris-Saclay, 92290 Châtenay-Malabry, France

  • *Author to whom correspondence should be addressed: xubin.physics@gmail.com

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Issue

Vol. 94, Iss. 14 — 1 October 2016

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