How to control spin-Seebeck current in a metal-quantum dot-magnetic insulator junction

Lei Gu, Hua-Hua Fu, and Ruqian Wu
Phys. Rev. B 94, 115433 – Published 26 September 2016

Abstract

The control of the spin-Seebeck current is still a challenging task for the development of spin caloritronic devices. Here, we construct a spin-Seebeck device by inserting a quantum dot (QD) between the metal lead and magnetic insulator. Using the slave-particle approach and noncrossing approximation, we find that the spin-Seebeck effect increases significantly when the energy level of the QD locates near the Fermi level of the metal lead due to the enhancement of spin flipping and occurrences of quantum resonance. Since this can be easily realized by applying a gate voltage in experiments, the spin-Seebeck device proposed here can also work as a thermovoltaic transistor. Moreover, the optimal correlation strength and the energy level position of the QD are discussed to maximize the spin-Seebeck current as required for applications in controllable spin caloritronic devices.

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  • Received 18 April 2016
  • Revised 4 August 2016

DOI:https://doi.org/10.1103/PhysRevB.94.115433

©2016 American Physical Society

Authors & Affiliations

Lei Gu1, Hua-Hua Fu1,2,*, and Ruqian Wu2,†

  • 1School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
  • 2Department of Physics and Astronomy, University of California, Irvine, California 92697-4575, USA

  • *hhfu@hust.edu.cn
  • wur@uci.edu

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Issue

Vol. 94, Iss. 11 — 15 September 2016

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