Comparative angle-resolved photoemission spectroscopy study of CaRuO3 and SrRuO3 thin films: Pronounced spectral weight transfer and possible precursor of lower Hubbard band

H. F. Yang, C. C. Fan, Z. T. Liu, Q. Yao, M. Y. Li, J. S. Liu, M. H. Jiang, and D. W. Shen
Phys. Rev. B 94, 115151 – Published 23 September 2016

Abstract

In the prototypical 4d system (Sr,Ca)RuO3, the degree and origin of electron correlations, and how they correlate with physical properties, still remain elusive, though extensive studies have been performed. In this work we present a comparative electronic structure study of high-quality epitaxial CaRuO3 and SrRuO3 thin films, by means of reactive molecular beam epitaxy and in situ angle-resolved photoemission spectroscopy. We found that while SrRuO3 possesses sharp features signaling the Fermi liquid state, the isostructural CaRuO3 exhibits broad features and its spectral weight is markedly transferred from the Fermi level to 1.2 eV forming a “hump” structure which resembles the Mott-Hubbard system (Sr,Ca)VO3. We suggest that this hump is the precursor of the lower Hubbard band, and the U/W (U and W represent the on-site Coulomb interactions and bandwidth, respectively) of our CaRuO3 thin film is much larger than that of SrRuO3. In addition, we discuss the origin of electron correlations as well as the ferromagnetism in SrRuO3 which is absent in CaRuO3. Our findings put constraints on future studies, and also show that perovskite ruthenates are indeed an experimentally tunable system for the study of electron correlations.

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  • Received 20 May 2016
  • Revised 29 July 2016

DOI:https://doi.org/10.1103/PhysRevB.94.115151

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

H. F. Yang1,2, C. C. Fan1,2, Z. T. Liu1,2, Q. Yao1,3, M. Y. Li1,2, J. S. Liu1,2, M. H. Jiang1, and D. W. Shen1,2,*

  • 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
  • 2CAS-Shanghai Science Research Center, Shanghai 201203, China
  • 3State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, China

  • *dwshen@mail.sim.ac.cn

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Vol. 94, Iss. 11 — 15 September 2016

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