From Fe3O4/NiO bilayers to NiFe2O4-like thin films through Ni interdiffusion

O. Kuschel, R. Buß, W. Spiess, T. Schemme, J. Wöllermann, K. Balinski, A. T. N'Diaye, T. Kuschel, J. Wollschläger, and K. Kuepper
Phys. Rev. B 94, 094423 – Published 20 September 2016

Abstract

Ferrites with (inverse) spinel structure display a large variety of electronic and magnetic properties, making some of them interesting for potential applications in spintronics. We investigate the thermally induced interdiffusion of Ni2+ ions out of NiO into Fe3O4 ultrathin films, resulting in off-stoichiometric nickel ferrite–like thin layers. We synthesized epitaxial Fe3O4/NiO bilayers on Nb-doped SrTiO3(001) substrates by means of reactive molecular beam epitaxy. Subsequently, we performed an annealing cycle comprising three steps at temperatures of 400 C, 600 C, and 800 C under an oxygen background atmosphere. We studied the changes of the chemical and electronic properties as result of each annealing step with help of hard x-ray photoelectron spectroscopy and found a rather homogeneous distribution of Ni and Fe cations throughout the entire film after the overall annealing cycle. For one sample we observed a cationic distribution close to that of the spinel ferrite NiFe2O4. Further evidence comes from low-energy electron diffraction patterns indicating a spinel-type structure at the surface after annealing. Site- and element-specific hysteresis loops performed by x-ray magnetic circular dichroism uncovered the antiferrimagnetic alignment between the octahedral coordinated Ni2+ and Fe3+ ions and the Fe3+ ion in tetrahedral coordination. We find a quite low coercive field of 0.02 T, indicating a rather low defect concentration within the thin ferrite films.

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  • Received 9 February 2016
  • Revised 1 July 2016

DOI:https://doi.org/10.1103/PhysRevB.94.094423

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

O. Kuschel1, R. Buß1, W. Spiess1, T. Schemme1, J. Wöllermann1, K. Balinski1, A. T. N'Diaye2, T. Kuschel3,4, J. Wollschläger1,5,*, and K. Kuepper1,5,†

  • 1Department of Physics, Barbarastraße 7, Osnabrück University, 49076 Osnabrück, Germany
  • 2Advanced Light Source, Lawrence Berkeley National Laboratory, California 94720, USA
  • 3Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, 33615 Bielefeld, Germany
  • 4Physics of Nanodevices, Zernike Institue for Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands
  • 5Center of Physics and Chemistry of New Materials, Osnabrück University, 49076 Osnabrück, Germany

  • *jwollsch@uos.de
  • kkuepper@uos.de

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Issue

Vol. 94, Iss. 9 — 1 September 2016

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