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Nuclear spin warm up in bulk n-GaAs

M. Kotur, R. I. Dzhioev, M. Vladimirova, B. Jouault, V. L. Korenev, and K. V. Kavokin
Phys. Rev. B 94, 081201(R) – Published 22 August 2016

Abstract

We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n-GaAs bulk crystal.

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  • Received 6 June 2016

DOI:https://doi.org/10.1103/PhysRevB.94.081201

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Kotur1, R. I. Dzhioev1, M. Vladimirova2, B. Jouault2, V. L. Korenev1, and K. V. Kavokin1,3

  • 1Ioffe Physico-Technical Institute of the RAS, 194021 St. Petersburg, Russia
  • 2Laboratoire Charles Coulomb, UMR 5221 CNRS/Université de Montpellier, F-34095 Montpellier, France
  • 3Spin Optics Laboratory, St. Petersburg State University, 1, Ulianovskaya, St. Peterbsurg 198504, Russia

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Issue

Vol. 94, Iss. 8 — 15 August 2016

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