Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

S. G. Pavlov, N. Deßmann, A. Pohl, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, S. Winnerl, H. Schneider, N. Stavrias, A. F. G. van der Meer, V. V. Tsyplenkov, K. A. Kovalevsky, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, and H.-W. Hübers
Phys. Rev. B 94, 075208 – Published 29 August 2016; Erratum Phys. Rev. B 95, 079903 (2017)

Abstract

Subnanosecond dynamics of optically excited electrons bound to excited states of neutral magnesium donor centers in silicon has been investigated. Lifetimes of nonequilibrium electrons have been derived from the decay of the differential transmission at photon energies matching the intracenter and the impurity-to-conduction band transitions. In contrast to hydrogenlike shallow donors in silicon, significantly longer lifetimes have been observed. This indicates weaker two-phonon and off-resonant interactions dominate the relaxation processes in contrast to the single-intervalley-phonon-assisted impurity-phonon interactions in the case of shallow donors in silicon.

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  • Received 21 April 2016
  • Revised 8 June 2016

DOI:https://doi.org/10.1103/PhysRevB.94.075208

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Erratum

Erratum: Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon [Phys. Rev. B 94, 075208 (2016)]

S. G. Pavlov, N. Deßmann, A. Pohl, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, S. Winnerl, H. Schneider, N. Stavrias, A. F. G. van der Meer, V. V. Tsyplenkov, K. A. Kovalevsky, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, and H.-W. Hübers
Phys. Rev. B 95, 079903 (2017)

Authors & Affiliations

S. G. Pavlov1, N. Deßmann2, A. Pohl2, V. B. Shuman3, L. М. Portsel3, А. N. Lodygin3, Yu. A. Astrov3, S. Winnerl4, H. Schneider4, N. Stavrias5, A. F. G. van der Meer5, V. V. Tsyplenkov6, K. A. Kovalevsky6, R. Kh. Zhukavin6, V. N. Shastin6, N. V. Abrosimov7, and H.-W. Hübers1,2

  • 1Institute of Optical Sensor Systems, German Aerospace Center (DLR), Berlin, Germany
  • 2Department of Physics, Humboldt Universität zu Berlin, Berlin, Germany
  • 3Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
  • 4Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
  • 5Radboud University, Institute of Molecules and Materials, FELIX Laboratory, Nijmegen, The Netherlands
  • 6Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
  • 7Leibniz Institute for Crystal Growth, Berlin, Germany

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Vol. 94, Iss. 7 — 15 August 2016

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