Voltage drop due to longitudinal spin accumulation across the ballistic domain wall

V. Fallahi and R. Safaei
Phys. Rev. B 94, 064426 – Published 24 August 2016

Abstract

The ballistic magnetoresistance (MR) of a domain wall constricted in a nanocontact between two p-type semiconducting magnetic nanowires is studied theoretically using the Landauer-Büttiker approach. Our analysis is based on coherent scattering of the carriers by the spin-dependent potential associated with the wall structure. The transmission properties of coherent states are obtained by introducing an algorithm to solve the coupled spin channels Schrödinger equation with mixed Dirichlet-Neumann boundary conditions applied far from the domain wall. Then, the local accumulated spin densities along the nanowire produced by electrical spin injection at the nanocontact are numerically calculated. It is demonstrated that the induced voltage drop due to the longitudinal spin accumulation considerably increases in the case of the narrow domain walls. Furthermore, it is shown that two spin accumulation and mistracking effects give approximately equal contributions to the wall MR ratio in the limit of the sharp domain walls. However, the MR ratio is dominantly determined by the spin accumulation effect as the domain wall width increases.

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  • Received 22 May 2016

DOI:https://doi.org/10.1103/PhysRevB.94.064426

©2016 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & Optical

Authors & Affiliations

V. Fallahi* and R. Safaei

  • Department of Laser and Optical Engineering, University of Bonab, 5551761167 Bonab, Iran

  • *v.fallahi@bonabu.ac.ir

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Issue

Vol. 94, Iss. 6 — 1 August 2016

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