Strain-rate dependence of ramp-wave evolution and strength in tantalum

J. Matthew D. Lane, Stephen M. Foiles, Hojun Lim, and Justin L. Brown
Phys. Rev. B 94, 064301 – Published 25 August 2016

Abstract

We have conducted molecular dynamics (MD) simulations of quasi-isentropic ramp-wave compression to very high pressures over a range of strain rates from 1011 down to 108 1/s. Using scaling methods, we collapse wave profiles from various strain rates to a master profile curve, which shows deviations when material response is strain-rate dependent. Thus, we can show with precision where, and how, strain-rate dependence affects the ramp wave. We find that strain rate affects the stress-strain material response most dramatically at strains below 20%, and that above 30% strain the material response is largely independent of strain rate. We show good overall agreement with experimental stress-strain curves up to approximately 30% strain, above which simulated response is somewhat too stiff. We postulate that this could be due to our interatomic potential or to differences in grain structure and/or size between simulation and experiment. Strength is directly measured from per-atom stress tensor and shows significantly enhanced elastic response at the highest strain rates. This enhanced elastic response is less pronounced at higher pressures and at lower strain rates.

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  • Received 22 June 2016

DOI:https://doi.org/10.1103/PhysRevB.94.064301

©2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. Matthew D. Lane, Stephen M. Foiles, Hojun Lim, and Justin L. Brown

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

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Issue

Vol. 94, Iss. 6 — 1 August 2016

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