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Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers

Yiling Yu, Yifei Yu, Chao Xu, Andy Barrette, Kenan Gundogdu, and Linyou Cao
Phys. Rev. B 93, 201111(R) – Published 24 May 2016
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Abstract

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose on the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows a dependence on the interaction with substrates as its rate increases from 0.1cm2/s (0.05cm2/s) to 0.3cm2/s (0.1cm2/s) with the substrates removed for WS2 (MoS2) monolayers. It turns to be the major pathway of exciton decay and dominates the luminescence efficiency when the exciton density is beyond 1010cm2 in suspended monolayers or 1011cm2 in supported monolayers. This sets an upper limit on the density of injected charges in light-emission devices for the realization of optimal luminescence efficiency. The strong EEA rate also dictates the pumping threshold for population inversion in the monolayers to be 1218MW/cm2 (optically) or 2.54×105A/cm2 (electrically).

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  • Received 2 December 2015
  • Revised 11 April 2016

DOI:https://doi.org/10.1103/PhysRevB.93.201111

©2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yiling Yu1,2, Yifei Yu1, Chao Xu2, Andy Barrette2, Kenan Gundogdu2,*, and Linyou Cao1,2,†

  • 1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
  • 2Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA

  • *kgundog@ncsu.edu
  • lcao2@ncsu.edu

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Issue

Vol. 93, Iss. 20 — 15 May 2016

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