Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field

A. S. Sheremet, O. V. Kibis, A. V. Kavokin, and I. A. Shelykh
Phys. Rev. B 93, 165307 – Published 28 April 2016

Abstract

We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices.

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  • Received 4 March 2016

DOI:https://doi.org/10.1103/PhysRevB.93.165307

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. S. Sheremet1,2, O. V. Kibis3,4,5,*, A. V. Kavokin2,6,7,8, and I. A. Shelykh1,4,5

  • 1National Research University for Information Technology, Mechanics and Optics (ITMO), 197101 St.-Petersburg, Russia
  • 2Russian Quantum Center, Novaya 100, 143025 Skolkovo, Moscow Region, Russia
  • 3Department of Applied and Theoretical Physics, Novosibirsk State Technical University, 630073 Novosibirsk, Russia
  • 4Science Institute, University of Iceland IS-107, Reykjavik, Iceland
  • 5Division of Physics and Applied Physics, Nanyang Technological University, 637371 Singapore
  • 6School of Physics and Astronomy, University of Southampton, SO17 1BJ, Southampton, United Kingdom
  • 7Spin Optics Laboratory, St.-Petersburg State University, 198504 Peterhof, St.-Petersburg, Russia
  • 8CNR-SPIN, Tor Vergata, viale del Politechnico 1, I-00133 Rome, Italy

  • *oleg.kibis@nstu.ru

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Issue

Vol. 93, Iss. 16 — 15 April 2016

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