Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zuniga-Perez
Phys. Rev. B 93, 115205 – Published 16 March 2016

Abstract

The polariton condensation phase diagram is compared in GaN and ZnO microcavities grown on mesa-patterned silicon substrate. Owing to a common platform, these microcavities share similar photonic properties with large quality factors and low photonic disorder, which makes it possible to determine the optimal spot diameter and to realize a thorough phase diagram study. Both systems have been investigated under the same experimental conditions. The experimental results and the subsequent analysis reveal clearly that longitudinal optical phonons have no influence in the thermodynamic region of the condensation phase diagram, while they allow a strong (slight) decrease of the polariton lasing threshold in the trade-off zone (kinetic region). Phase diagrams are compared with numerical simulations using Boltzmann equations, and are in satisfactory agreement. A lower polariton lasing threshold has been measured at low temperature in the ZnO microcavity, as is expected due to a larger Rabi splitting. This study highlights polariton relaxation mechanisms and their importance in polariton lasing.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
5 More
  • Received 18 December 2015
  • Revised 9 February 2016

DOI:https://doi.org/10.1103/PhysRevB.93.115205

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

O. Jamadi1,2, F. Réveret1,2,*, E. Mallet1,2, P. Disseix1,2, F. Médard1,2, M. Mihailovic1,2, D. Solnyshkov1,2, G. Malpuech1,2, J. Leymarie1,2, X. Lafosse3, S. Bouchoule3, F. Li4, M. Leroux4, F. Semond4, and J. Zuniga-Perez4

  • 1Clermont Université, Institut Pascal, BP 10448, F-63000 Clermont-Ferrand, France
  • 2CNRS, UMR 6602, Institut Pascal, F-63171 Aubière, France
  • 3LPN-CNRS, F-91460 Marcoussis, France
  • 4CRHEA-CNRS, F-06560 Valbonne, France

  • *Corresponding author: francois.reveret@univ-bpclermont.fr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 93, Iss. 11 — 15 March 2016

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×