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Optically generated giant traps in high-purity GaN

M. A. Reshchikov, J. D. McNamara, A. Usikov, H. Helava, and Yu. Makarov
Phys. Rev. B 93, 081202(R) – Published 2 February 2016

Abstract

An unusual temperature dependence of the photoluminescence lifetime for the green luminescence (GL) band in GaN is explained. This GL is caused by an internal transition of electrons from an excited state to the ground state of the 0/+ transition level of the isolated CN defect. The excited state appears only after the CN defect captures two photogenerated holes. The electron capture by the excited state is nonradiative, yet the lifetime of such can be probed by the temperature variation of the GL lifetime, whose temperature dependence shows a classic case of electron capture by a giant trap.

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  • Received 13 July 2015

DOI:https://doi.org/10.1103/PhysRevB.93.081202

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. A. Reshchikov1,*, J. D. McNamara1, A. Usikov2,3, H. Helava2, and Yu. Makarov2

  • 1Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA
  • 2Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729, USA
  • 3Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg, Russia

  • *mreshchi@vcu.edu

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Issue

Vol. 93, Iss. 8 — 15 February 2016

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