Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional MoS2

Jinhua Hong, Kun Li, Chuanhong Jin, Xixiang Zhang, Ze Zhang, and Jun Yuan
Phys. Rev. B 93, 075440 – Published 29 February 2016

Abstract

The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly investigated experimentally until now. Yet, it not only determines the optical properties of these low-dimensional materials, but also holds the key in revealing the underlying character of the electronic states involved. Here we used both angle-resolved electron energy-loss spectroscopy and spectral analysis of angle-integrated spectra to study the evolution of the anisotropic electronic transition involving the low-energy valence electrons in the freestanding MoS2 layers with different thicknesses. We are able to demonstrate that the well-known direct gap at 1.8 eV is only excited by the in-plane polarized field while the out-of-plane polarized optical gap is 2.4 ± 0.2 eV in monolayer MoS2. This contrasts with the much smaller anisotropic response found for the indirect gap in the few-layer MoS2 systems. In addition, we determined that the joint density of states associated with the indirect gap transition in the multilayer systems and the corresponding indirect transition in the monolayer case has a characteristic three-dimensional-like character. We attribute this to the soft-edge behavior of the confining potential and it is an important factor when considering the dynamical screening of the electric field at the relevant excitation energies. Our result provides a logical explanation for the large sensitivity of the indirect transition to thickness variation compared with that for the direct transition, in terms of quantum confinement effect.

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  • Received 14 May 2014
  • Revised 14 January 2016

DOI:https://doi.org/10.1103/PhysRevB.93.075440

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jinhua Hong1, Kun Li2, Chuanhong Jin1,*, Xixiang Zhang3,†, Ze Zhang1, and Jun Yuan1,4,‡

  • 1State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
  • 2Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 239955, Kingdom of Saudi Arabia
  • 3Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 239955, Kingdom of Saudi Arabia
  • 4Department of Physics, University of York, Heslington, York, YO10 5DD, United Kingdom

  • *Corresponding author: chhjin@zju.edu.cn
  • xixiang.zhang@kaust.edu.sa
  • jun.yuan@york.ac.uk

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Issue

Vol. 93, Iss. 7 — 15 February 2016

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