Electron-phonon cooling in large monolayer graphene devices

Christopher B. McKitterick, Daniel E. Prober, and Michael J. Rooks
Phys. Rev. B 93, 075410 – Published 4 February 2016

Abstract

We present thermal measurements of large-area (over 1000μm2) monolayer graphene samples at cryogenic temperatures to study the electron-phonon thermal conductivity of graphene. By using two large samples with areas which differ by a factor of 10, we are able to clearly show the area dependence of the electron-phonon cooling. We find that, at temperatures far below the Bloch-Grüneisen temperature TBG, the electron-phonon cooling power is accurately described by the T4 temperature dependence predicted for clean samples. Using this model, we are able to extract a value for the electron-phonon coupling constant as a function of gate voltage and the graphene electron-lattice deformation potential.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 26 May 2015
  • Revised 16 January 2016

DOI:https://doi.org/10.1103/PhysRevB.93.075410

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Christopher B. McKitterick and Daniel E. Prober

  • Department of Physics and Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA

Michael J. Rooks

  • Yale Institute for Nanoscale and Quantum Engineering, Yale University, New Haven, Connecticut 06520, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 93, Iss. 7 — 15 February 2016

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×