Stability and magnetism of strongly correlated single-layer VS2

Houlong L. Zhuang and Richard G. Hennig
Phys. Rev. B 93, 054429 – Published 26 February 2016

Abstract

Single-layer transition metal dichalcogenides exhibit a variety of atomic structures and associated exotic electronic and magnetic properties. Density-functional calculations using the LDA+U approximation show that single-layer VS2 is a strongly correlated material, where the stability, phonon spectra, and magnetic moments of the octahedral (1T) and the trigonal prismatic (2H) structures significantly depend on the effective Hubbard U parameter, Ueff. Comparison with the HSE06 hybrid density functional used as a benchmark indicates that Ueff=2.5 eV, which consistently shows that the 2H structure is more stable than the 1T structure and a ferromagnetic semiconductor. The magnetic moments are localized on the V atoms and coupled ferromagnetically due to the superexchange interactions mediated by the S atoms. Calculations of the magnetic anisotropy show an easy plane for the magnetic moment. Assuming a classical XY model with nearest neighbor coupling, we determine the critical temperature, Tc, for the Berezinsky-Kosterlitz-Thouless transition of 2H single-layer VS2 to be about 90 K. Applying biaxial tensile strains can increase Tc. Using Wannier interpolation, we evaluate the Berry curvature and anomalous Hall conductivity of 2H single-layer VS2. The coexistence of quasi-long-range ferromagnetic ordering and semiconducting behavior enables 2H single-layer VS2 to be a promising candidate for spintronics applications.

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  • Received 14 August 2015
  • Revised 14 November 2015

DOI:https://doi.org/10.1103/PhysRevB.93.054429

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Houlong L. Zhuang1,2 and Richard G. Hennig2,3,*

  • 1Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • 2Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
  • 3Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

  • *rhennig@ufl.edu

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Vol. 93, Iss. 5 — 1 February 2016

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