Conductance of a single electron transistor with a retarded dielectric layer in the gate capacitor

O. G. Udalov, N. M. Chtchelkatchev, S. A. Fedorov, and I. S. Beloborodov
Phys. Rev. B 92, 205416 – Published 16 November 2015

Abstract

We study the conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that the ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in the case of “fast” but still retarded response of the FE (dielectric) layer an additional contribution to the Coulomb blockade effect appears leading to the suppression of the SET conductance. We take into account fluctuations of the FE (dielectric) polarization using Monte Carlo simulations. For “fast” FE, these fluctuations partially suppress the additional Coulomb blockade effect. Using Monte Carlo simulations, we study the transition from “fast” to “slow” FE. For high temperatures, the peak value of the SET conductance is almost independent of the FE relaxation time. For temperatures close to the FE Curie temperature, the conductance peak value nonmonotonically depends on the FE relaxation time. A maximum appears when the FE relaxation time is of the order of the SET discharging time. Below the Curie point the conductance peak value decreases with increasing the FE relaxation time. The conductance shows the hysteresis behavior for any FE relaxation time at temperatures below the FE transition point. We show that conductance hysteresis is robust against FE internal fluctuations.

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  • Received 5 October 2015
  • Revised 26 October 2015

DOI:https://doi.org/10.1103/PhysRevB.92.205416

©2015 American Physical Society

Authors & Affiliations

O. G. Udalov1,2, N. M. Chtchelkatchev3,4,5, S. A. Fedorov4, and I. S. Beloborodov1

  • 1Department of Physics and Astronomy, California State University Northridge, Northridge, California 91330, USA
  • 2Institute for Physics of Microstructures, Russian Academy of Science, Nizhny Novgorod, 603950, Russia
  • 3L.D. Landau Institute for Theoretical Physics, Russian Academy of Sciences,117940 Moscow, Russia
  • 4Department of Theoretical Physics, Moscow Institute of Physics and Technology, Moscow 141700, Russia
  • 5Institute for High Pressure Physics, Russian Academy of Science, Troitsk 142190, Russia

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Issue

Vol. 92, Iss. 20 — 15 November 2015

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