Dynamics of screening in photodoped Mott insulators

Denis Golež, Martin Eckstein, and Philipp Werner
Phys. Rev. B 92, 195123 – Published 12 November 2015

Abstract

We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.

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  • Received 29 July 2015
  • Revised 8 October 2015

DOI:https://doi.org/10.1103/PhysRevB.92.195123

©2015 American Physical Society

Authors & Affiliations

Denis Golež1, Martin Eckstein2, and Philipp Werner1

  • 1Department of Physics, University of Fribourg, 1700 Fribourg, Switzerland
  • 2Max Planck Research Department for Structural Dynamics, University of Hamburg-CFEL, 22761 Hamburg, Germany

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Issue

Vol. 92, Iss. 19 — 15 November 2015

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