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Electron g-factor anisotropy in an AlAs quantum well probed by ESR

A. V. Shchepetilnikov, Yu. A. Nefyodov, I. V. Kukushkin, L. Tiemann, C. Reichl, W. Dietsche, and W. Wegscheider
Phys. Rev. B 92, 161301(R) – Published 8 October 2015

Abstract

Electron spin resonance (ESR) was studied in an asymmetrically doped 16-nm AlAs quantum well grown in the [001] direction. Surprisingly the ESR was detectable even if the magnetic field was parallel to the surface of the two-dimensional system. This allowed us to investigate precisely the in-plane anisotropy of the electron g factor. In the case of the magnetic field aligned along the [110] or [11¯0] crystallographic axes only one ESR peak was observed, whereas it tended to split into two well-separated peaks when the in-plane component of the magnetic field was between these directions. This fact clearly indicates that two in-plane valleys at X points of the Brillouin zone were occupied with electrons and each valley was characterized by the anisotropic g factor with the [100], [010], and [001] principal axes. The principal g-factor values were extracted.

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  • Received 4 August 2015

DOI:https://doi.org/10.1103/PhysRevB.92.161301

©2015 American Physical Society

Authors & Affiliations

A. V. Shchepetilnikov1,2,*, Yu. A. Nefyodov1, I. V. Kukushkin1, L. Tiemann3, C. Reichl3, W. Dietsche3, and W. Wegscheider3

  • 1Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia
  • 2Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
  • 3Solid State Physics Laboratory, ETH Zurich, Schafmattstrasse 16, 8093 Zurich, Switzerland

  • *shchepetilnikov@issp.ac.ru

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Vol. 92, Iss. 16 — 15 October 2015

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