Embedded energy state in an open semiconductor heterostructure

Ivana Hrebikova, Lukas Jelinek, and Mário G. Silveirinha
Phys. Rev. B 92, 155303 – Published 6 October 2015

Abstract

In this paper, we show that HgCdTe heterostructures may support, within the envelope function approximation, bound electronic states embedded in the continuum, such that the discrete energy spectrum overlaps the continuous spectrum. Although the proposed heterostructures are generally penetrable by an incoming electron wave, it is shown that they may support spatially localized trapped stationary states with an infinite lifetime. We discuss the possibility of a free electron being captured by the proposed open resonator and present a detailed study of the trapping lifetime in the case of a detuned resonator.

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  • Received 10 July 2015
  • Revised 16 September 2015

DOI:https://doi.org/10.1103/PhysRevB.92.155303

©2015 American Physical Society

Authors & Affiliations

Ivana Hrebikova* and Lukas Jelinek

  • Department of Electromagnetic Field, Faculty of Electrical Engineering, Czech Technical University in Prague, 166 27 Prague, Czech Republic

Mário G. Silveirinha

  • Department of Electrical Engineering, Instituto de Telecomunicações, University of Coimbra, 3030-290 Coimbra, Portugal

  • *hrebiiva@fel.cvut.cz
  • lukas.jelinek@fel.cvut.cz
  • mario.silveirinha@co.it.pt

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Issue

Vol. 92, Iss. 15 — 15 October 2015

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