Emergence of charge degrees of freedom under high pressure in the organic dimer-Mott insulator β(BEDTTTF)2ICl2

K. Hashimoto, R. Kobayashi, H. Okamura, H. Taniguchi, Y. Ikemoto, T. Moriwaki, S. Iguchi, M. Naka, S. Ishihara, and T. Sasaki
Phys. Rev. B 92, 085149 – Published 28 August 2015

Abstract

To elucidate the pressure evolution of the electronic structure in an antiferromagnetic dimer-Mott (DM) insulator β(BEDTTTF)2ICl2, which exhibits superconductivity at 14.2 K under 8 GPa, we measured the polarized infrared (IR) optical spectra under high pressure. At ambient pressure, two characteristic bands due to intra- and interdimer charge transfers have been observed in the IR spectra, supporting that this salt is a typical half-filled DM insulator at ambient pressure. With increasing pressure, however, the intradimer charge transfer excitation shifts to much lower energies, indicating that the effective electronic state changes from half-filled to 3/4-filled as a result of weakening of dimerization. This implies that the system approaches a charge-ordered state under high pressure, in which charge degrees of freedom emerge as an important factor. The present results suggest that charge fluctuation inside of dimers plays an important role in the high-temperature superconductivity.

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  • Received 9 March 2015
  • Revised 14 August 2015

DOI:https://doi.org/10.1103/PhysRevB.92.085149

©2015 American Physical Society

Authors & Affiliations

K. Hashimoto1,*, R. Kobayashi1, H. Okamura2,†, H. Taniguchi3, Y. Ikemoto4, T. Moriwaki4, S. Iguchi1, M. Naka5,6, S. Ishihara6,7, and T. Sasaki1

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 2Department of Physics, Graduate School of Science, Kobe University, Kobe 657-8501, Japan
  • 3Saitama University, Shimo-Ohkubo 225, Saitama, 338-8570, Japan
  • 4SPring-8, Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198, Japan
  • 5RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
  • 6Department of Physics, Tohoku University, Sendai 980-8578, Japan
  • 7CREST, JST, Chiyoda, Tokyo 102-0076, Japan

  • *Corresponding author: hashimoto@imr.tohoku.ac.jp
  • Present address: Graduate School of Advanced Technology and Science, Tokushima Univeristy, Tokushima 770-8506, Japan.

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Vol. 92, Iss. 8 — 15 August 2015

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