Abstract
The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a -dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in and 2, the time dependence of the space-integrated spin polarization is dominated by a superexponential decay, crossing over to a stretched-exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random-walk trajectories, which occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system versus . Furthermore, we investigate in detail the coordinate dependence of the time-integrated spin polarization , which can be probed in the spin-transport experiments with spin-polarized electrodes. We demonstrate that, while is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin-decay length on the external magnetic and electric fields.
5 More- Received 26 March 2015
- Revised 17 July 2015
DOI:https://doi.org/10.1103/PhysRevB.92.054204
©2015 American Physical Society