Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies

I. Razado-Colambo, J. Avila, C. Chen, J.-P. Nys, X. Wallart, M.-C. Asensio, and D. Vignaud
Phys. Rev. B 92, 035105 – Published 2 July 2015

Abstract

Graphene samples with thicknesses ranging from monolayer to few layer graphene grown on the C-face of SiC by Si flux-assisted molecular beam epitaxy were studied to understand their stacking structure. Particular attention was put on determining the size, thickness, spatial distribution, and orientation relative to the SiC of the graphene domains. A complete electronic characterization of the graphene films down to submicrometer grains was obtained by using synchrotron-based conventional and nanoresolved photoelectron spectroscopies. These measurements were completed with scanning probe techniques like atomic force and scanning tunneling microscopies. By probing exactly the same region of the samples using angular-resolved and core-level photoelectron spectroscopy imaging and point modes, we were able to identify two types of grains constituting the graphene films with radically different thickness, stacking and orientation. The size, distribution, and registry with the substrate for each type of grain were determined. Most interestingly, we have evidenced that multilayer graphene grains with Bernal stacking coexist with areas composed of twisted bilayer graphene grains.

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  • Received 13 April 2015
  • Revised 3 June 2015

DOI:https://doi.org/10.1103/PhysRevB.92.035105

©2015 American Physical Society

Authors & Affiliations

I. Razado-Colambo1, J. Avila2, C. Chen2, J.-P. Nys1, X. Wallart1, M.-C. Asensio2, and D. Vignaud1,*

  • 1I.E.M.N., UMR CNRS 8520, Av. Poincaré CS 60069, 59652 Villeneuve d'Ascq Cedex, France
  • 2Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin-BP 48, 91192 Gif sur Yvette Cedex, France

  • *Dominique.Vignaud@univ-lille1.fr

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Vol. 92, Iss. 3 — 15 July 2015

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