Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature

Feng-kuo Hsu, Wei Xie, Yi-Shan Lee, Sheng-Di Lin, and Chih-Wei Lai
Phys. Rev. B 91, 195312 – Published 14 May 2015

Abstract

We demonstrate room-temperature spin-polarized ultrafast (10ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by nonresonant elliptically polarized light. The lasing energy is not locked to the bare cavity resonance, and shifts 10meV as a function of the photoexcited density. Such spin-polarized lasing is attributed to a spin-dependent stimulated process of correlated electron-hole pairs. These pairs are formed near the Fermi edge in a high-density electron-hole plasma coupled to the cavity light field.

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  • Received 2 January 2015
  • Revised 22 April 2015

DOI:https://doi.org/10.1103/PhysRevB.91.195312

©2015 American Physical Society

Authors & Affiliations

Feng-kuo Hsu1, Wei Xie1, Yi-Shan Lee2, Sheng-Di Lin2, and Chih-Wei Lai1,*

  • 1Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA
  • 2Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

  • *cwlai@msu.edu

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Vol. 91, Iss. 19 — 15 May 2015

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