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Effect of long- and short-range order on SiGe alloy thermal conductivity: Molecular dynamics simulation

Christopher H. Baker and Pamela M. Norris
Phys. Rev. B 91, 180302(R) – Published 12 May 2015

Abstract

We report the role of long- and short-range order on the thermal conductivity and mode relaxation times of a model Si0.5Ge0.5 alloy using molecular dynamics simulation. All interactions used the Stillinger-Weber potential and the Si and Ge atoms differed only by their mass. The simulated alloys were generated using a Monte Carlo approach to decouple the short-range order from the long-range order. The thermal conductivity is almost entirely determined by the alloy's nearest-neighbor short-range order. Changes to the mode relaxation times between 3 and 6THz upon short-range ordering, and the observed f2 power law trend, suggest that short-range ordering reduces the anharmonic scattering rate of low frequency modes. The trend of thermal conductivity with short-range order may be transferred to real Si0.5Ge0.5 and other semiconductor alloys to the extent that scattering from mass disorder dominates their thermal conductivities.

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  • Received 6 March 2015

DOI:https://doi.org/10.1103/PhysRevB.91.180302

©2015 American Physical Society

Authors & Affiliations

Christopher H. Baker* and Pamela M. Norris

  • Department of Mechanical and Aerospace Engineering, University of Virginia, 122 Engineer's Way, Charlottesville, Virginia 22904-4746, USA

  • *chb2fd@virginia.edu
  • pamela@virginia.edu

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Issue

Vol. 91, Iss. 18 — 1 May 2015

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