Radiative properties of multicarrier bound excitons in GaAs

Todd Karin, Russell J. Barbour, Charles Santori, Yoshihisa Yamamoto, Yoshiro Hirayama, and Kai-Mei C. Fu
Phys. Rev. B 91, 165204 – Published 20 April 2015

Abstract

Excitons in semiconductors can have multiple lifetimes due to spin-dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of k=0 excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be To×(1,3,34), where To=(0.61±0.12)ns. Furthermore, we provide an estimate of the intralevel and interlevel exciton spin-relaxation rates.

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  • Received 4 November 2014
  • Revised 16 January 2015

DOI:https://doi.org/10.1103/PhysRevB.91.165204

©2015 American Physical Society

Authors & Affiliations

Todd Karin1, Russell J. Barbour1, Charles Santori2, Yoshihisa Yamamoto3, Yoshiro Hirayama4, and Kai-Mei C. Fu1,5

  • 1Department of Physics, University of Washington, Seattle, Washington 98195, USA
  • 2Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
  • 3Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085, USA
  • 4Deptartment of Physics, Tohoku University, 6-3 Aramakiaza Aoba, Aobaku, Sendai, 980-8578 Japan
  • 5Department of Electrical Engineering, University of Washington, Seattle, Washington 98195, USA

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Issue

Vol. 91, Iss. 16 — 15 April 2015

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