Electronic and transport properties in geometrically disordered graphene antidot lattices

Zheyong Fan, Andreas Uppstu, and Ari Harju
Phys. Rev. B 91, 125434 – Published 27 March 2015

Abstract

A graphene antidot lattice, created by a regular perforation of a graphene sheet, can exhibit a considerable band gap required by many electronics devices. However, deviations from perfect periodicity are always present in real experimental setups and can destroy the band gap. Our numerical simulations, using an efficient linear-scaling quantum transport simulation method implemented on graphics processing units, show that disorder that destroys the band gap can give rise to a transport gap caused by Anderson localization. The size of the defect-induced transport gap is found to be proportional to the radius of the antidots and inversely proportional to the square of the lattice periodicity. Furthermore, randomness in the positions of the antidots is found to be more detrimental than randomness in the antidot radius. The charge carrier mobilities are found to be very small compared to values found in pristine graphene, in accordance with recent experiments.

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  • Received 22 December 2014
  • Revised 23 February 2015

DOI:https://doi.org/10.1103/PhysRevB.91.125434

©2015 American Physical Society

Authors & Affiliations

Zheyong Fan1,2,*, Andreas Uppstu2, and Ari Harju2

  • 1School of Mathematics and Physics, Bohai University, Jinzhou 121000, China
  • 2COMP Centre of Excellence, Department of Applied Physics, Aalto University, Helsinki, Finland

  • *Corresponding author: brucenju@gmail.com

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Vol. 91, Iss. 12 — 15 March 2015

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